Similarly, the work function values from KP measurements increased from 4.84 eV to 5.71 eV with increasing Se content. Based on UPS results, the work function values increased from 4.29 eV to 6.01 eV with increasing Se content. It appears that with increasing Sn content the high - temperature / lowtemperature peak ratio increases markedly. UPS and Kelvin probe (KP) measurements were conducted to calculate work function values. Sn 3d5/2 binding energy values from standards taken in this laboratory 2. The Auger parameter and Auger spectral shapes may be helpful here (click for post). From the XPS spectra, the Sn 3d 5/2 peak was deconvoluted into three peaks: (Sn 4+, 487 ± 0.3 eV), (Sn 2+, 486.3 ± 0.3 eV), (Sn 0, 484.9 ± 0.3 eV) and the Sn 4+ species only existed in pure Sn thin films potentially due to inevitable surface oxidation. Chemical state assignment for tin is difficult due to overlapping Sn 3d5/2 values for SnO and SnO2 (see Table 1.). (c) The apparent disappearance of Sn O 2 Raman peak at 630 cm 1 and the emergence of the 617 cm 1 peak of Co 3 O 4 for x > 0.01. (b) Raman spectra of pure Sn O 2, 1 Co-doped Sn O 2 and a physical mixture of pure Sn O 2 and Co 3 O 4.
Additionally, Se incorporated thin films were amorphous in nature, which was confirmed by XRD results. (a) Raman spectra of Sn 1 x Co x O 2 prepared at 600 ° C as a function of x. XPS detected a 1:1 ratio of Sn'/Pt', while Mossbauer detected much larger. (c) Ba 4 d (left) and Sn 3 d (right) spectra of LBSO films after subsequent H 2 O cleaning. the same procedure was applied to determine the Au/Sn ratio. However, XPS spectra for a Pt-Sn alloy and Sn metal were not distinguishable. (b) XPS areal ratio of Sn 3 d and Ba 4 d peaks A (Sn 3 d)/ A (Ba 4 d) of as-annealed LBSO films (black dots) depending on annealing atmosphere used to control p (O 2). SEM and AFM images revealed that incorporating higher amounts of Se increases the resulting grain size and surface roughness. X-ray photoelectron spectroscopy (XPS) survey spectra with main core level lines of the. In order to analyze the innate physicochemical properties of the thin films, various characterization tools such as scanning electron microscope (SEM), atomic force microscope (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and contact angle measurements were used. The effects of Sn incorporation on morphological, structural and optical properties of ZnO films were investigated. In this study, tin selenide thin films with different atomic ratio combinations were fabricated utilizing the RF magnetron co-sputtering method. In this work, Undoped Zinc Oxide (ZnO) and Sndoped Zinc Oxide (ZnO:Sn) films have been deposited by sol-gel dip coating method, where the Sn/Zn atomic ratio was 3 and 5 in the solution.